The two broad areas of CEMDAS research at Texas A&M are devices and systems.
Device research is concentrated in three of the strongest areas of technology within the Department of Electrical Engineering:
Solid
State Electronics Research
The rapid expansion of the semiconductor industry
over the past several decades has been accompanied by a trend to ever-smaller
feature sizes, which in turn generates an ongoing need for new and improved
device designs and manufacturing methods. Universities play an important
role in this process in ensuring that well-trained, innovative engineers
are available for industrial employment. Both undergraduate and graduate
students in the solid state electronics program at Texas A&M become
familiar with the methods and equipment for thin-film deposition, photolithography,
wet and dry etching, process diagnostics, and device evaluation. Our faculty
members have recently been employed as visiting scholars in state-of-the-art
integrated circuit processing facilities, thus ensuring that we remain
current with this fast-moving industry.
Research areas in solid state electronics include integrated circuit design, processing, and diagnostic techniques, vacuum microelectronics, and semiconductor materials for thermoelectric application.
Integrated Circuit Design, Processing, and Diagnostic Techniques
The traditional complementary metal oxide semiconductor
(CMOS) inverter employs a single n-channel and a single p-channel transistor
in a series connection. The gates are tied to a common input point with
the output taken from the common connection of the source and drain of
the two transistors. The transfer characteristic of output voltage versus
input voltage exhibits a high- output state for a low-input condition and
a low-output state for a high-input condition. At Texas A&M, we have
recently demonstrated an inverter that exhibits a stable state in the mid-range
of input voltages, thus providing three levels of stable conditions as
the input voltage is varied. This is believed to be the first multi-valued
logic circuit design using straightforward variations of proven CMOS technology.
Devices such as this can provide an increase in functional complexity without
an increase in circuit size.
Metallization remains a critical issue in the evolution
of solid-state devices. Advances in the state-of-the-art in low-resistance
ohmic contacts for gallium arsenide, gallium phosphide, indium phosphide,
and a number of other III-V semiconductors using platinum-based regrowth
techniques have been achieved by Texas A&M researchers. These techniques
are currently being applied by companies such as Texas Instruments, Hughes,
and Lockheed Martin in the fabrication of improved microwave circuits and
devices. Another metallization issue is the use of copper as a replacement
for aluminum in the next generation of integrated circuits. Techniques
such as silicide regrowth and electroplating of thin copper films for interconnections
are under investigation by CEMDAS researchers.
Laser scanning is being used as a diagnostic technique
for latchup sites in CMOS integrated circuits (ICs). The npnp structures
which are the active elements in these ICs are latent bipolar circuits
which can be bistable. One of the bistable states, the on state,
causes the part to draw large current and causes the CMOS circuit to stop
operating. This phenomenon is called latchup because the circuit may resume
normal operation once the power is removed. Researchers at CEMDAS are developing
a laser scanning system that can determine the susceptibility of a production
IC to latchup and create a map of the latchup sites on a wafer. The system
is under computer control and the current drawn by the part is stored with
position to produce a two-dimensional photocurrent image.
Vacuum Microelectronics
The demand for flat panel displays has undergone
a remarkable growth in recent years driven in large part by the need of
laptop computers for light, rugged, thin displays. This demand is likely
to grow with the anticipated arrival of the so-called information appliance
as well as other consumer applications such as telephones, automobiles,
and TV receivers, in addition to myriad military and industrial applications.
CEMDAS researchers are working to commercialize a unique field emission
display (FED) in which a thin-film phosphor developed at Texas A&M
will be applied to a FED architecture developed by Dr. Leonid Karpov of
KYPWEE Display Corporation of Austin, Tex. This approach overcomes manufacturing
difficulties and results in a monolithic, cost-effective, rugged display.
Research is underway toward the realization of monochromatic and color
displays suitable for handheld applications which will function at full-motion
video rates.
The limited electron mobility in semiconductors
may eventually cause a return to vacuum devices for the highest speed active
electronic components. Researchers at CEMDAS are developing production
processes for the fabrication of porous silicon field-emission cathodes.
These cathodes have been shown to produce a two order of magnitude increase
in the emission current over untreated silicon cathodes. This improved
performance is attributed to the submicroscopic roughness which substantially
increases the geometrical enhancement factor. This multitude of emission
sites per cathode should also improve uniformity and reliability as well
as reduce noise. Current work is directed toward the development
of a vacuum triode amplifier and a light-emitting diode.
Semiconductor Materials for Thermoelectric Application
As chlorofluorocarbon (CFC)-based refrigeration systems come under increasing criticism for their contribution to the depletion of the world s ozone layer, the Seebeck effect and its application in solid-state cooling devices (SSCDs) is being considered as a replacement technology for traditional refrigeration systems. SSCD technology appears to be on the verge of significant material breakthroughs that have the potential to make the thermoelectric coefficient of performance for SSCDs exceed that of CFC-based refrigeration. Researchers at Texas A&M are engaged in doping certain semiconductors with phonon scattering impurities and measuring the resulting effects on thermal and electrical conductivities with the long-term goal of improving the thermoelectric figure of merit for SSCD applications. The work is a collaborative effort between Texas A&M and Marlow Industries, Inc., of Dallas, Tex., the world s largest supplier of commercial SSCDs.
Microwave
Circuit and Device Research
As application of microwave technology in the commercial
sector has escalated in recent years, so has the demand for inexpensive,
power-efficient, small, and reliable components. Such components
are needed for wireless communications, satellite communications, sensors,
radio-frequency identification systems, and security systems. Microwave
component research at Texas A&M encompasses radio-frequency, microwave
and millimeter-wave circuits and devices; active antennas and power combiners;
wireless communications and sensors; wireless power transmission in space;
antennas and phased arrays; microwave device and circuit modeling; and
quasi-optical components. Optoelectronic circuits for microwave application
are also of considerable interest.
Many novel microwave circuits and devices have been
invented and/or developed for the first time at Texas A&M. These include
a frequency tunable microwave ring resonator with over 20% tuning range,
various active antenna elements and power combiners created by integrating
Gunn and FET devices with notch and patch antennas, an electronic tunable
coplanar waveguide filter with over 26% tuning range, wideband voltage
tunable oscillators, aperture-coupled microstrip interconnects, a 35 GHz
rectenna detector with 60% conversion efficiency, new high-T superconductor
characterization methods and devices, wideband coplanar waveguide components
and hybrid couplers with octave bandwidth, a low-loss Fabry-Perot millimeter-wave
filter, novel feedforward power amplifiers with low intermodulation, power
amplifiers for wireless applications, wireless RF sensors, a 15 GHz PHEMT
oscillator with 58% efficiency, a microstrip flat reflectarray antenna,
30 GHz low-cost phased arrays for beam steering, dual-frequency antennas,
optoelectronic parametric amplifiers with > 20 dB gain, and traveling wave
photodetectors.
Electro-Optic
Device Research
The electro-optics program encompasses a range of
technologies that make use of optical and electronic phenomena. Research
areas of primary interest include fiber optics, integrated optics, and
semiconductor lasers. We seek to exploit the special attributes of optical
fibers (high information capacity, low optical loss, small size, mechanical
flexibility) and diode lasers (small size, low electrical power consumption,
high-speed modulation capability) in solving problems of current technological
interest. Application areas addressed in our research include communication,
sensing, and instrumentation.
Integrated Optics
Integrated optics is concerned with the development
of thin-film components for performing functions such as modulation, switching,
and multiplexing of guided light beams. Much of the research is oriented
towards applications in optical fiber communications, a field in which
technology is evolving rapidly to keep pace with seemingly insatiable demands
for bandwidth. We are exploring new materials and fabrication methods for
integrated optical waveguides as well as the demonstration of new device
concepts.
A novel technique developed at Texas A&M for
making low-loss optical waveguides using the static strain optic effect
has made it possible for the first time to make guided wave devices in
tungsten bronze ferroelectric materials SBN and BSTN. These super-EO
materials feature exceptionally large electro-optic coefficients,
which are exploited to realize optical modulators and switches with very
low electrical power consumption. The discovery in our laboratories that
these materials have very low susceptibility to optical damage makes them
attractive candidates for fabricating nonlinear frequency converters and
guided-wave devices for emerging applications at visible wavelengths.
The recent emergence of wavelength-division-multiplexing
in fiber-optic systems has created a need for tunable filters for combining
and separating the wavelength channels. At Texas A&M, a novel, tunable
add-drop filter has been produced using a phase matched strain-induced
grating for polarization coupling in diffused waveguides in a lithium tantalate
substrate. It is projected that extending this work to lithium niobate
substrates will make it possible to meet the international standard 100
GHz spacing between adjacent wavelength channels in a polarization-independent
filter with unprecedented tuning speed and tuning range.
Fiber-Optic Sensors
A patented technique for making internal mirrors
in optical fibers forms the basis for a new class of sensors with the fiber
Fabry Perot interferometer (FFPI) as the active element. In extensive field
tests, these sensors have been used to measure gas pressure in internal
combustion engines, liquid pressure in pumps, and strain in civil structures.
The fiber-optic sensors have shown an unprecedented combination of high
sensitivity, ability to endure extreme temperatures, and immunity from
electromagnetic interference. Laboratory work is continuing on transducers
for acceleration and temperature.
Another class of fiber-optic sensors based upon
the Sagnac interferometer is also being vigorously pursued. Exceptional
performance for measurement of electrical current, rotation rate, and liquid
flow rate has been achieved. Fiber-optic sensors developed at Texas A&M
are being commercialized by Honeywell, Phoenix, Ariz.; and by FFPI Industries,
Bryan, Tex.
Semiconductor and Fiber Lasers
Semiconductor lasers are studied for application in fiber-optic networks. A theory developed to explain the phenomenon of nonlinear gain in semiconductor lasers, after experimental verification, has been used in the design of lasers that can operate at frequencies to 40 GHz. The theory has also been extended to the prediction of the noise and intermodulation distortion levels in subcarrier-multiplexed optical communication systems. A world record in frequency stability for semiconductor lasers has been achieved by locking the optical output to a fiber-optic resonator. Tunable, line-narrowed lasers are being studied for use in spectroscopy and for generation of microwave signals. Application of erbium-doped fiber amplifiers for generation of high- power optical pulses for nonlinear wavelength conversion in optical fibers is under investigation.
New microwave, electro-optic, and solid-state devices developed in our laboratories are frequently used in the demonstration of new system capabilities or improved system performance. We are interested in applying these components in areas such as wireless communications, optical communications, fiber-optic network diagnostics, magnetic resonance imaging, high-resolution optical imaging, industrial equipment monitoring, control systems for industrial machinery and processes. Some examples of system research are given below.
Much of the technology developed by CEMDAS faculty is targeted for application in the fast-growing areas of wireless, satellite, and fiber- optic communication. Microwave front-ends to 30 GHz are assembled using field-effect transistors (FETs) or high-electron-mobility transistors (HEMTs) as the power sources. Demonstration of dense wavelength division multiplexing for fiber-optic systems using tunable lasers and add-drop filters under development at Texas A&M is planned. The same electro-optical components that provide almost unlimited bandwidth can also be applied to multiplexed intersatellite links as a step beyond microwave communication.
Biomedical Imaging
The Magnetic Resonance Systems Laboratory (MRSL)
is developing technology for low-field nuclear magnetic resonsance (NMR)
microscopy applications. In conjunction with Dr. Russ Huson of the Department
of Physics at Texas A&M, MRSL researchers have demonstrated the potential
for MR imaging at 0.22 Tesla. Using a desktop-sized magnet, images of okra
plants have been obtained with 150 micron in-plane resolution in just over
1 minute. The magnet was constructed from less than $2,500 of Nd-Fe-B
magnet material. Future improvements in radio-frequency coil design have
the potential to improve the in-plane resolution to less than 50 microns.
Potential applications include inexpensive magnetic resonance imaging and
spectroscopy systems for on-line industrial process control as well as
laboratory applications.
Low-coherence optical interferometry is being applied
for imaging of the internal structure of biological tissues. A novel signal
processing scheme makes it possible to obtain three-dimensional images
with sub-micron resolution with reflected optical powers in the picowatt
range. This technique reveals structure in biological samples not seen
using conventional methods. The same system can be applied to imaging of
solid-state materials and devices.
Industrial Equipment and Process
Monitoring and Control
Fiber-optic sensors developed at Texas A&M have
undergone extensive field tests. Combustion pressure sensors have been
tested in large stationary engines operated by natural gas transmission
companies: El Paso Energy and Transco, and in diesel locomotive engines
manufactured by General Electric and General Motors. Data from the engine
sensors is used in conjunction with control systems to reduce emissions
and improve fuel economy. Liquid pressure sensors have been tested in large
industrial pumps operated by Citgo and by Borg Warner, where they have
shown a unique ability to detect the onset of harmful conditions, such
as cavitation and surge. Strain sensors have been installed on a Union
Pacific Railroad bridge for structural health monitoring.
The U.S. semiconductor community faces new challenges
as it moves towards production of circuits with feature sizes of a quarter
micron and smaller. CEMDAS researchers are working to identify the key
issues and problems facing the semiconductor industry in a number of critical
processes involved in integrated circuit manufacturing, including: (a)
single crystals (substrate materials), (b) thin-film deposition techniques,
(c) rapid thermal processing, and (d) surface preparation. In particular,
processing issues related to 12- inch and larger diameter bulk crystal
growth of silicon, epitaxial thin film growth, bulk crystal growth of other
electronic materials, and chemical/mechanical polishing are considered
worthy for further consideration in the proposed project. As an example
of one such process, the Czochralski (Cz) technique is used extensively
for bulk crystal growth in both industry and university research labs.
Research is in progress to improve the control of the Cz process in order
to increase the yield and the quality of the crystals. This research effort
encompasses both modeling and application of modern multivariable control
theory. The overall goal is to develop a control scheme for the process
that is based on a model that is as material independent as possible. Thus
with only a few minor adjustments, the same controller can be used to grow
different materials.